Characterization in Semiconductor Compound Processing

by Yale Strausser

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Summary

The book will have two major sections, one on Si based systems and the other on compound semiconductor systems. Although there are many materials common to both technologies, the applications, processing, and problems seen, are different enough to warrant this separation. In the silicon section there will be a chapter on semiconducting layers, such as epi SI, SOI layers, Si Ge films, etc., discussing the techniques used in problem-solving in these films. In the area of conducting films there will be chapters of doped poly Si, silicides and polycides, Al- and/or Cu-cased films, W-based films and one on barrier materials. Each of these systems is sufficiently different to benefit from a different author and a separate discussion of the types of problems encountered. This section will then be completed by a chapter or dielectric films. Even though there are a number of different applications for dielectrics, i.e. passivation films, intermetal dielectrics, gate oxides, field oxides, ad

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